A method for forming a transistor includes forming a gate dielectric layer over
a portion of a semiconductor substrate, the substrate being substantially free
of silicon; defining a gate electrode over a portion of the gate dielectric layer;
and introducing ions into the substrate proximate the gate electrode to define
source and drain regions. A transistor includes a semiconductor substrate that
is substantially free of silicon and a gate dielectric layer over a portion of
the substrate. The transistor can also include a gate electrode over a portion
of the gate dielectric layer and introduce ions proximate the gate electrode, defining
source and drain regions.
