The present invention is directed to a method of forming a ferroelectric
capacitor having a (111) PZT texture. The method includes forming a smooth
bottom electrode diffusion barrier layer that facilitates a preferential
(111) texture in the subsequently formed bottom electrode layer. The (111)
bottom electrode layer texture than facilitates a high quality (111)
texture in the overlying PZT layer, thereby improving bit-to-bit
polarization charge uniformity for various capacitors as the ferroelectric
capacitor sizes continue to shrink.
