A process and structure for fabricating a non-volatile memory cell through the
formation of a source and drain region and a charge trapping layer located therebetween
is presented. E-fields for generating trapped charges are formed through using
poly-edge discharge techniques wherein the gate structures of the memory cells
are laterally separated from the vertical region of the source and drain regions.
The gate structure forms a laterally directed e-field through the charge trapping
layer to one of the source and drain regions which enables the charge to be trapped
and retained in an area that is lateral to the source and drain regions. Lateral
separation of the gate from the source and drain regions is maintained through
the use of spacers which may take the form of insulated polysilicon structures
or in an alternate embodiment may take the form of insulating spacers located on
the sidewalls of the gate structure.
