According to one exemplary embodiment, a structure comprises a substrate.
The structure further comprises at least one memory cell situated on the substrate.
The at least one memory cell may be, for example, a SONOS flash memory cell. The
structure further comprises an interlayer dielectric layer situated over at least
one memory cell and over the substrate. The structure further comprises a first
antireflective coating layer situated over the interlayer dielectric layer. According
to this exemplary embodiment, the structure further comprises a second antireflective
coating layer situated directly over the first anti reflective coating layer. Either
the first antireflective coating layer or second antireflective coating layer must
be a silicon-rich layer. The first antireflective coating layer and the second
antireflective coating may form a UV radiation blocking layer having a UV transparency
less than approximately 1.0 percent, for example.
