The present invention discloses a ferroelectric memory device and a method of
forming the same. The ferroelectric memory device includes a semiconductor substrate,
a capacitor lower electrode, a ferroelectric layer, and a capacitor upper electrode.
The semiconductor substrate has a lower structure. The capacitor lower electrode
has a cylindrical shape and a certain height. The ferroelectric layer is conformally
stacked over substantially the entire surface of the semiconductor substrate including
the capacitor lower electrode. The capacitor upper electrode has a spacer shape
and is formed around the sidewall of the ferroelectric layer that surrounds the
lower electrode. In the method of forming the ferroelectric memory device, a semiconductor
substrate having an interlayer dielectric layer and a lower electrode contact formed
through the interlayer dielectric layer is prepared. A cylindrical capacitor lower
electrode is formed on the interlayer dielectric layer to cover the contact. A
ferroelectric layer is conformally stacked at the semiconductor substrate having
the capacitor lower electrode. A spacer-shaped upper electrode is formed around
the sidewall of the ferroelectric layer that surrounds the capacitor lower electrode.
