A method of forming a highly doped layer of AlGaN, is practiced by first removing
contaminants from a MBE machine. Wafers are then outgassed in the machine at very
low pressures. A nitride is then formed on the wafer and an AlN layer is grown.
The highly doped GaAlN layer is then formed having electron densities beyond 11020
cm-3 at Al mole fractions up to 65% are obtained. These levels
of doping application of n-type bulk, and n/p tunnel injection to short wavelength
UV emitters. Some applications include light emitting diodes having wavelengths
between approximately 254 and 290 nm for use in fluorescent light bulbs, hazardous
materials detection, water purification and other decontamination environments.
Lasers formed using the highly doped layers are useful in high-density storage
applications or telecommunications applications. In yet a further embodiment, a
transistor is formed utilizing the highly doped layer as a channel.
