Method of making multiple work function gates by implanting metals with metallic alloying additives

   
   

A method of forming a first and second transistors with differing work function gates by differing metals with a second metal selectively implanted or diffused into a first metal.

 
Web www.patentalert.com

< Method of making a shaped gate electrode structure, and device comprising same

< Deuterium reservoirs and ingress paths

> Method of depositing a low dielectric with organo silane

> Display and method of driving display

~ 00122