A semiconductor device is disclosed. The semiconductor device has a
crystalline silicon film as an active layer region. The crystalline
silicon film has needle-like or columnar crystals oriented parallel to the
substrate and having a crystal growth direction of (111) axis. A method
for preparing the semiconductor device comprises steps of adding a
catalytic element to an amorphous silicon film; and heating the amorphous
silicon film containing the catalytic element at a low temperature to
crystallize the silicon film.
