Method of producing a ferroelectric memory and a memory device

   
   

The present invention refers to a method of producing a ferroelectric memory which method comprises: a) providing ferroelectric particles, b) providing a substrate, c) orientating at least a subset of said ferroelectric particles such that there is an axis of said particles along which axis a dipole moment may be directed in the ferroelectric state, said axis having an orientation the average of which is in at least one predetermined direction with regard to a surface of said substrate, d) allowing said ferroelectric particles to attach to said substrate, and to a method of storing information on a substrate, and to a memory device.

La presente invenzione si riferisce ad un metodo di produrre una memoria ferroelectric che il metodo contiene: a) fornendo le particelle ferroelectric, b) fornendo un substrato, c) orientando almeno un sottoinsieme delle particelle ferroelectric dette tali che ci è un asse delle particelle dette lungo quale asse un il momento di dipolo può essere diretto nel ferroelectric dichiara, ad esempio l'asse che ha un orientamento la media di cui è in almeno una ha predeterminato il senso riguardo ad una superficie del substrato detto, d) permettendo che le particelle ferroelectric dette fissino al substrato detto e ad un metodo di memorizzare le informazioni su un substrato e ad un dispositivo di memoria.

 
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