Provided is a plasmon resonance detector that can detect temperature
change in optical devices, in which the metal structure having plasmon
resonance absorption is used for the optical devices. A diode formed of a
conductive substrate, an n-type semiconductor layer, an i-type
semiconductor layer, a p-type semiconductor layer, an n electrode
(negative electrode), a p electrode (positive electrode), an insulating
film, or the like is used as a semiconductor device whose resistance
value changes in accordance with temperature change. A nanochain formed
by connecting a plurality of metal nanoparticles is disposed on this
diode. When the nanochain is irradiated with light, the nanochain
generates heat. The heat generated in the nanochain is conducted to the
diode. The resistance value of the diode changes in accordance with
temperature change, and thus this change is read, a temperature or an
amount of heat generation of the nanochain is measured, and existence and
strength of the plasmon resonance are detected.