The invention relates to a process for modifying the properties of a thin
layer (1) formed on the surface of a support (2) forming a substrate (3)
utilised in the field of microelectronics, nanoelectronics or
microtechnology, nanotechnology, characterised in that it consists of:
forming at least one thin layer (1) on a nanostructured support with
specific upper surface (2), and treating the nanostructured support with
specific upper surface (2) to generate internal strains in the support
causing its deformation at least in the plane of the thin layer so as to
ensure corresponding deformation of the thin layer to modify its
properties.