A semiconductor device 100 has a configuration having a via 124 formed on a first interconnect 112. A method for designing the semiconductor device 100 includes: calculating an anticipated value x.sub.open of a dimension of a growing region of a void 150 expanding in a stress induced voiding (SIV)-ensured time t.sub.open at a predetermined temperature, assuming that the void 150 grows from an origin in a copper interconnect (interconnect metallic film 110); and determining a geometric factor of the via 124 by comparing a dimension of a contacting region between a first interconnect 112 and the via 124 with the anticipated value x.sub.open. The dimension of the contacting region may be presented as d+h (where d represents a diameter of a via 124, and h represents a buried depth that the via 124 is buried within the first interconnect 112).