Embodiments of a method of forming a tapered via using a receding mask are
disclosed. In one embodiment, an etch mask formed on a substrate includes
a first aperture in a first photoresist layer and a second, larger
aperture in an overlying second photoresist layer. Peripheries of the
first and second apertures may be tapered as a result of an out-of-focus
exposure. An etching process may be performed to create a tapered via in
the substrate, and during this etching process, the first, relatively
thinner photoresist layer will recede outwardly toward the aperture in
the second photoresist layer. Other embodiments are described and
claimed.