A method of epitaxially growing a SiC film on a Si substrate, including: (a)
supplying
a raw material gas containing a gas having P (phosphorus) element and a gas having
B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin
film having a thickness of 5 nm or more and 100 nm or less on the Si substrate;
(b) further supplying a raw material gas containing a gas having P element and
a gas having B element on the Si substrate, and thereby synthesizing a cubic boron
phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or
less on the Si substrate; and (c) supplying a gas having carbon element and a gas
having silicon element on the Si substrate thereon the BP single crystal film is
formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous
SiC film having a thickness of 1 nm or more and several hundreds nanometers or
less on the cubic boron phosphide single crystal film on the Si substrate.