Efficiency of leading out light released from an active layer, i.e. the
external quantum efficiency, can be improved remarkably by processing a light lead-out
surface to have an embossment. A layer containing a p-type dopant like magnesium
(Mg) is deposited near the surface of a p-type GaN layer to diffuse it there, and
a p-side electrode is made on the p-type GaN layer after removing the deposited
layer. This results in ensuring ohmic contact with the p-side electrode, preventing
exfoliation of the electrode and improving the reliability.
