A memory storage device includes a first and second memory cell which each have
a top end and a bottom end. A first and second first dimension conductor are substantially
coplanar and parallel and extend in a first dimension. The first first dimension
conductor intersects the bottom end of the first memory cell and the second first
dimension conductor intersects the top end of the second memory cell. A first second
dimension conductor extends in a second dimension and intersects the top end of
the first memory cell and a second second dimension conductor extends in the second
dimension and intersects the bottom end of the second memory cell. A first third
dimension conductor which extends in a third dimension is positioned between the
first and second memory cell to couple the first second dimension conductor to
the second second dimension conductor.
