A semiconductor device comprises a semiconductor substrate having a main surface;
a semiconductor layer of a first conduction type provided on the main surface of
said semiconductor substrate; a first buried layer of the first conduction type
provided between said semiconductor layer and said semiconductor substrate; a first
connection region of the first conduction type provided around said first buried
layer, said first connection region extending from the surface of said semiconductor
layer to said first buried layer; a switching element provided in the surface region
of said semiconductor layer on said first buried layer; and a low breakdown-voltage
element provided in a surface region of said semiconductor layer, said low breakdown-voltage
element being closer to said first connection region than said switching element
and having lower breakdown voltage than that of said switching element.
