A method of plasma-processing is provided which includes placing a sample on
one
of electrodes provided in a vacuum processing chamber and holding the sample onto
the electrodes by an electrostatic attracting force. A processing gas is introduced
into an environment in which said sample is placed, and the environment is evacuated
to a pressure condition for processing said sample. The processing gas is then
formed into a plasma under the pressure condition, the sample is processed by the
plasma, and a pulse bias voltage having a pulse cycle of 0.1 m to 10 m
is applied to the sample.
