The present invention provides a method and apparatus for growing a single crystal
by the Czochralski method, wherein a single crystal is grown with forced cooling
of neighborhood of a crystal growth interface by disposing a cooling cylinder formed
of copper or a metal having a heat conductivity larger than that of copper at least
in the vicinity of the crystal growth interface so as to surround the single crystal
under pulling and circulating a cooling medium in the cooling cylinder. Thus, there
are provided a method and apparatus for growing a single crystal, which can exert
cooling effect on a growing single crystal to the maximum extent so as to realize
higher crystal growth rate, even when a silicon single crystal having a diameter
of 300 mm or more is grown.
