The present invention provides a method for producing a bonded wafer comprising
at least an ion implantation process where at least either hydrogen ions or rare
gas ions are implanted into a first wafer from its surface to form a micro bubble
layer (implanted layer) in the first wafer, a bonding process where the surface
subjected to the ion implantation of the first wafer is bonded to a surface of
a second wafer, and a delamination process where the first wafer is delaminated
at the micro bubble layer, wherein the ion implantation process is performed in
divided multiple steps, and a bonded wafer. Thus, there are provided a method for
producing a bonded wafer, which is for reducing micro-voids generated in the ion
implantation and delamination method and a bonded wafer free from micro-voids.
