A Schottky diode includes a semiconductor substrate made of 4HSiC, an
epitaxially
grown 4HSiC layer, an ion implantation layer, a Schottky electrode, an
ohmic electrode, and an insulative layer made of a thermal oxide film. The Schottky
electrode and the insulative layer are not in contact with each other, with a gap
being provided therebetween, whereby an altered layer does not occur. Therefore,
it is possible to suppress the occurrence of a leak current.
