The object of the present invention is to lower the oscillation threshold value
and to improve the yield by improving the luminous efficiency in the central wavelength
of a laser. To achieve the object, the nitride semiconductor light emitting element
of the present invention includes a substrate, a lower clad layer formed of a nitride
semiconductor containing Al and Ga formed thereon, a lower guide layer formed of
a nitride semiconductor mainly containing In and Ga formed thereon, and an active
layer including a nitride semiconductor mainly containing In and Ga formed thereon.
The lower guide layer has a first layer and a second layer higher in In content
than the first layer, successively stacked from the active layer side.
