The present invention provides an ultraviolet-transparent conductive film comprising
a Ga2O3 crystal. The film has a transparency in the wavelength
range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced
by an oxygen deficiency or dopant in the Ga2O3 crystal. The
dopant includes at least one element selected from the group consisting of the
Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive
film is formed through either one of a pulsed-laser deposition method, sputtering
method, CVD method and MBE method, under the conditions with a substrate temperature
of 600 to 1500 C. and an oxygen partial pressure of 0 to 1 Pa.
