An integrated circuit manufacturing method is provided having a semiconductor
substrate with a semiconductor device. A device dielectric layer is formed on the
semiconductor substrate and a channel dielectric layer on the device dielectric
layer has an opening formed therein. A barrier layer lines the channel opening
and a conductor core fills the opening over the barrier layer. A seedless barrier
layer lines the opening, and a conductor core fills the opening over the seedless
barrier layer. The barrier layer is deposited in the opening and contains atomic
layers of barrier material which bonds to the dielectric layer, an intermediate
material which bonds to the barrier material layer and to the conductor core, and
a conductor core material which bonds to the intermediate material. The conductor
core bonds to the conductor core material.
