Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers page

Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers

A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.

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