A method of preparing high-k gate dielectrics by liquid phase anodic oxidation,
which first produces a metallic film on the surface of a clean silicon substrate,
next oxidizes the metallic film to form a metallic oxide as a gate oxidizing layer
by liquid phase anodic oxidation, then promoting quality of the gate oxidizing
layer by processing a step of thermal annealing. With this oxidation, a gate dielectric
layer of high quality, high-k and ultrathin equivalent oxide thickness (EOT) can
be produced, which can be integrated into a complementary metal oxide semiconductor
(CMOS) production process directly.
