A memory cell that has first and second fully depleted transfer devices each
having
a body region and first and second diffused electrodes. The cell has a differential
storage capacitor having at least one node abutting and in electrical contact with
one of the first and second diffused electrodes of each of the transfer devices.
The storage capacitor has a primary capacitance and a plurality of inherent capacitances,
wherein the primary capacitance has a capaictive value that is at least approximately
five times greater than that of the plurality of inherent capacitances.
