The invention provides a thin film device where ionic crystals are epitaxially
grown on a Si single crystal substrate through a proper buffer layer, and its for
fabrication method. A ZnS layer is first deposited on a Si single crystal substrate.
Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited
thereon. The ZnS thin film is an oriented film excellent in crystallinity and has
excellent surface flatness. When ZnS can be once epitaxially grown on the Si single
crystal substrate, the ionic crystal thin films can be easily epitaxially grown
subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic
crystals having differences in lattice constants from Si can be easily epitaxially
grown in an epitaxial thin film with few lattice defects on the Si single crystal
substrate. The characteristics of a thin film device utilizing it can be enhanced.
