A semiconductor device manufacturing method and a semiconductor device manufacturing
mask both of which make it possible to suppress a semiconductor-device global step
and simply manufacture a highly-reliable semiconductor device. Square dummy patterns
each having one side of, for example, 0.25 m or less are inserted into an
area other than an actual pattern lying within a semiconductor device manufacturing
mask to thereby uniformize a pattern density, enable etching processing without
changing conditions set for every semiconductor device manufacturing mask and prevent
an increase in global step of a post-CMP interlayer insulating film.
