A ferroelectric memory device and a method for manufacturing the same is
disclosed. Because a (Bi.sub.x La.sub.y)Ti.sub.3 O.sub.12 (BLT) layer,
which can be crystallized in relatively low temperature, is used in a
capacitor, the electrical characteristics of the ferroelectric capacitor
can be improved. The method for manufacturing ferroelectric memory device
includes the steps of forming a first conductive layer for a bottom
electrode on a semiconductor substrate, forming the (Bi.sub.x
La.sub.y)Ti.sub.3 O.sub.12 ferroelectric layer, wherein `x` representing
atomic concentration of Bi ranges from about 3.25 to about 3.35 and `y`
representing atomic concentration of La ranges from about 0.70 to about
0.90 and forming a second conductive layer for a top electrode on the
(Bi.sub.x La.sub.y)Ti.sub.3 O.sub.12 ferroelectric layer.
