Magnetoresistive memory (MRAM)

   
   

The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of the write currents lying in the cell array plane decreases sufficiently rapidly with increasing distance from the crossover point. The cell array is constructed from a matrix of the column leads and the row leads.

Форма руководств блока клетки разносторонности магнитные ячейкы памяти оптимизирована путем отклонять от квадратного сечения руководств in such a way that компонент магнитного поля течений писания лежа в уменшениях плоскости блока клетки достаточно быстро with increasing расстояние от пункта кроссовера. Блок клетки построен от матрицы руководств колонки и руководств рядка.

 
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