A nitride semiconductor device according to the present invention includes a P-type contact layer and a P-type electrode provided on the P-type contact layer. The P-type electrode includes a AuGa film provided on the P-type contact layer, a Au film provided on the AuGa film, a Pt film 4 provided on the Au film, and a Au film provided on the Pt film. The ratio of the thickness of the AuGa film to the total thickness of the AuGa film and the Au film is not less than 12% but not more than 46%.

 
Web www.patentalert.com

< Ball grid array package format layers and structure

< Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications

> Dynamic random access memory with an electrostatic discharge structure and method for manufacturing the same

> Semiconductor chip arrangement
~ 00605