A .mu.-flap type nano/micro mechanical device with a lower electrode 1, 1a, 1b, an upper electrode layer 2, an dielectric layer 3 arranged between the lower electrode 1, 1a, 1b and the upper layer 2, such that the dielectric layer 3 and said upper electrode layer 2 form a layered body 4, the layered body 4 comprising a horizontal recess 5 in a side portion of the dielectric layer 3, and an overhanging portion 6 of reduced thickness over the recess 5 that forms a gap 5a; such that the overhanging portion 6 forms a .mu.-flap 6a which extends over the gap 5a. The device is a capacitative-based device in which the mechanical motion can be measured at room temperature and without monolithic integration thereof with an integrated circuit but that can be easily integrated with complementary metal oxide semiconductor (CMOS) circuitry.