A crystallization method includes wavefront-dividing an incident light
beam into a plurality of light beams, condensing the wavefront-divided
light beams in a corresponding phase shift portion of a phase shift mask
or in the vicinity of the phase shift portion to form a light beam having
an light intensity distribution of an inverse peak pattern in which a
light intensity is minimum in a point corresponding to the phase shift
portion of the phase shift mask, and irradiating a polycrystalline
semiconductor film or an amorphous semiconductor film with the light beam
having the light intensity distribution to produce a crystallized
semiconductor film.