A method of making a device includes forming an underlying mask layer over an underlying layer, forming a first mask layer over the underlying mask layer, patterning the first mask layer to form first mask features, undercutting the underlying mask layer to form underlying mask features using the first mask features as a mask, removing the first mask features, and patterning the underlying layer using at least the underlying mask features as a mask.

 
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< Self-assembly process for memory array

> PATTERNING OF SUBMICRON PILLARS IN A MEMORY ARRAY

> MASKING OF REPEATED OVERLAY AND ALIGNMENT MARKS TO ALLOW REUSE OF PHOTOMASKS IN A VERTICAL STRUCTURE

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