There is disclosed a thermosetting metal oxide-containing film-forming
composition for forming a metal oxide-containing film to be formed in a
multilayer resist process used in lithography, the thermosetting metal
oxide-containing film-forming composition comprising, at least: (A) a
metal oxide-containing compound obtained by hydrolytic condensation of a
hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a
thermal crosslinking accelerator; (C) a monovalent, divalent, or higher
organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher
alcohol; and (E) an organic solvent. There can be provided a metal
oxide-containing film-forming composition in a multi-layer resist
process, in a manner that a film made of the composition allows for
formation of an excellent pattern of a photoresist film, the composition
is capable of forming a metal oxide-containing film as an etching mask
having an excellent dry etching resistance, the composition is excellent
in storage stability, and the film made of the composition is removable
by a solution used in a removal process; a metal oxide-containing
film-formed substrate; and a pattern forming process.