A composite electronic component includes a multilayer wiring block having a plurality of insulating layers and a wiring pattern, and a chip-type electronic component built-in multilayer block having a plurality of insulating payers and a wiring pattern and including a first chip-type electronic component. The multilayer wiring block and the chip-type electronic component built-in multilayer block are electrically interconnected and arranged on substantially the same plane.

 
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> Grafted seed layer for electrochemical plating

> Methods for forming CMOS devices with intrinsically stressed metal silicide layers

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