The present invention provides a pattern inspection technique that enables
measurement and inspection of a fine pattern by a charged particle beam
to be performed with high throughput. A metrology system of fine pattern
according to the pattern inspection technique has: a the column that
includes a charged particle source, an electron optics for scanning a
desired observation area on a sample with a charged particle beam emitted
from the charged particle source, and a detector for detecting charged
particles generated secondarily from the sample scanned by the charged
particle beam; information processing means for measuring information
about geometry of a pattern formed on the sample based on information on
the intensity of the charged particles obtained by the detector; and a
sample introduction unit for introducing the sample into the inside of
the column; wherein a charge neutralizer unit for generating ions and
charge neutralizing the sample with the ions and surface potential
measuring means for measuring a surface potential of the sample surface
are provided on a path that is inside the sample introduction unit and
transports the sample to the column.