Two floating gate devices are arranged in a redundant configuration in a
non-volatile memory (NVM) such that stress induced leakage current (SILC)
or other failures do not result in a complete loss of memory storage. The
redundant NVM may be arranged as a series configuration, a parallel
configuration, a single-ended device, a differential device, a simple
logic circuit function, a complex logic circuit function, and/or as part
of an RFID tag system.