A semiconductor power device includes a semiconductor body with a plurality of gate trenches formed therein. Disposed within each gate trench is a spacer gate that extends along at least a portion of the sidewalls of the gate trench but not along at least a portion of the bottom surface of the trench. The spacer gate of each gate trench may also include a layer of silicide along outer surfaces thereof. The semiconductor body may include a channel region and each gate trench may extend through the channel region and into the semiconductor body. Formed at the bottom of each gate trench within the semiconductor body may be a tip implant of the same conductivity as the semiconductor body. In addition, a deep body implant of the same conductivity as the channel region may be formed at the base of the channel region.