A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.

 
Web www.patentalert.com

< RECEIVING CHECK AND BALANCE SYSTEM

> MAGNETIC OSCILLATOR BASED BIOSENSOR

> E-BEAM WRITE FOR HIGH-PRECISION DOT PLACEMENT

~ 00579