Disclosed is a near-field exposure mask having a light blocking layer formed on a substrate, the light blocking layer having an opening with an opening width narrower than a wavelength of an exposure light source, wherein exposure of an object to be exposed is carried out by use of near-field light to be produced at the opening while the exposure mask and the object to be exposed are placed in contact with each other, an important feature residing in that the light blocking layer is provided by a film that contains silicon in a range from 50% to 100% in terms of mole fraction.

 
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< Pattern forming apparatus

> Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure

> Radiographic imaging control apparatus and method for controlling the same

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