A method for producing an SiC single crystal comprises providing a low temperature region and a high temperature region in a crystal growth crucible (6); disposing a seed crystal substrate formed of an SiC single crystal in the low temperature region of the crystal growth crucible; disposing an SiC raw material in the high temperature region; and depositing a sublimation gas that sublimes from the SiC raw material on the seed crystal substrate to grow the SiC single crystal. A material used in the crucible member where the seed crystal is disposed is a material having a room-temperature linear expansion coefficient that differs from that of SiC by 1.0.times.10.sup.-6/K or less, and the crucible member where the seed crystal is disposed is made of Sic.