In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided.