A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

 
Web www.patentalert.com

< RUTHENIUM (Ru)/RUTHENIUM OXIDE (RuOx) DOPING OF GRAIN BOUNDARIES OF GRANULAR RECORDING MEDIA FOR ENHANCED CORROSION RESISTANCE/GREATER ADHESION

> DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT

> BIT-PATTERNED MAGNETIC MEDIA FORMED IN FILLER LAYER RECESSES

~ 00572