A semiconductor process and apparatus provide a T-shaped structure (96)
formed from a polysilicon structure (10) and an epitaxially grown
polysilicon layer (70) and having a narrower bottom critical dimension
(e.g., at or below 40 nm) and a larger top critical dimension (e.g., at
or above 40 nm) so that a silicide may be formed from a first material
(such as CoSi.sub.2) in at least the upper region (90) of the T-shaped
structure (96) without incurring the increased resistance caused by
agglomeration and voiding that can occur with certain silicides at the
smaller critical dimensions.