The present invention provides a technique, by which it is possible to obtain a liquid crystal display panel with high precision by forming very fine pattern of electroconductive film through linking of the areas with different widths, and it is also possible to reduce the number of processes. Like a wide-width electroconductive film and a narrow-width electroconductive film, most of the surface of an underlying film UW of a thin-film transistor substrate SUB1 is turned to lyophobic portion RA, and only the narrow-width gate electrode forming area is turned to lyophilic portion FA. An electroconductive ink is dropped evenly to the gate electrode forming area of the lyophilic portion FA, and a wide-width gate line is formed on the gate line forming area GLA of lyophobic portion RA by direct drawing of IJ. The film thickness of the ink films on the gate electrode forming area GTA and the gate line forming area GLA are controlled by adjusting a dropping amount of the ink on each area, and film thicknesses of these areas obtained on the liquid crystal display panel after baking are adjusted to be equal with each other.