Means and methods are provided for trench TMOS devices (41-10, 11, 12),
comprising, providing a first semiconductor (53, 53') of a first
composition having an upper surface (541), with a body portion (54)
proximate the upper surface (541), a drift portion (46, 83) spaced apart
from the upper surface (541) and a trench (49, 49') having sidewalls
(493) extending from the upper surface (541) into the drift portion (46,
83). A second semiconductor (56) adapted to provide a higher mobility
layer is applied on the trench sidewalls (493) where parts (78) of the
body portion (54) are exposed. A dielectric (70) covers the higher
mobility layer (56) and separates it from a control gate (72) in the
trench (49, 49'). Source regions (68) formed in the body portion (54)
proximate the upper surface (491) communicate with the higher mobility
layer (56). When biased, source-drain current (87, 87') flows from the
source regions (68) through gate induced channels (78) in the higher
mobility layer (56) and into the drift portion (46, 83) where it is
extracted by a drain (42) or other connection coupled to the drift
portion (46, 83).