An antireflection film comprising silica particles and at least one binder compound, which has a silica particle content of 30% by weight or more, an arithmetic mean surface roughness (Ra) of not more than 2 nm, and a surface silicon atom content of 10 atom % or more.

 
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> Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby

> Semiconductor device and manufacturing method thereof

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