A method for manufacturing a semiconductor device includes forming, on a substrate having a recessed portion on a surface, a plating film which is at least buried in the recessed portion and has a higher impurity concentration in an upper portion than in a lower portion, thermally treating the plating film, and removing the thermally treated plating film except for a portion buried in the recessed portion.

 
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< Seal cover structure comprising a nickel-tin (Ni--Sn) alloy barrier layer formed between a nickel (Ni) plating layer and a gold-tin (Au--Sn) brazing layer having Sn content of 20.65 to 25 WT % formed on the seal cover main body

> Method of reducing process steps in metal line protective structure formation

> Package substrate with dual material build-up layers
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